Brief Introduction
Topic The topic of our project is modelling electrical properties of thin high-k gate stacks. This project focus on researching the electrical properties of HfSiO (with 50% doping density), which is a high-k stack produced by MOCVD (the method of metal organic vapour chemical deposition). The final product is the different parameters that were calculated from the experimental CV curve, including k value, equivalent oxide thickness (EOT), mid gap voltage, mid gap capacitance, flat band voltage, flat band capacitance, fixed oxide charge. The field effect transistor (FET) was invented in 1951 by scientists such as Shockley from the bell laboratories with the achievement of controlled switching on and off under an external electric field. Up to now, the FET can still be seen everywhere in the mobile phones and personal computers. There are two types of FET, one is J-FET, the other is metal-oxide-semiconductor FET, the latter has become the first choice because of the prop...
