Overall Summary

In conclusion. This project has entailed analysis of C-V plot of HfSiO (50% Hf)/Si gate stack and calculating important parameters, such as flat band voltage, doping density of the Si semiconductor, mid gap voltage, oxide permittivity and fixed oxide charge. 

The results show that k is increased to about 9, when Hf content in the HfSiO is 50%. The fixed oxide charge is found to be negative and smaller than when Hf content of 70% is used in HfSiO. 

The results are of importance for engineering oxides for CMOS technology 

Members:

Haolin Li

Haohan Niu
Kexin Qi
Chencheng Luo